BLA6G1011-200R Datasheet - Ampleon

BLA6G1011-200R, Power LDMOS transistor

BLA6G1011-200R; BLA6G1011L(S)-200RG Power LDMOS transistor Rev.6 * 1 September 2015 Product data sheet 1.Product profile 1.1 General des.
200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Features

* Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:
* Output power = 200 W
* Power gain = 20 dB
* Efficiency = 65 %
* Easy power control
* Integrated ESD protection
* Enhanced ruggedness
* High effic

Applications

* at frequencies from 1030 MHz to 1090 MHz. Table 1. Test information Typical RF performance at Tcase = 25 C. Test signal f (MHz) VDS PL Gp D tr (V) (W) (dB) (%) (ns) Typical RF performance in a class-AB production test circuit for SOT502A pulsed RF 1030 to 1090 28 200 20 65 10 Typical

BLA6G1011-200R-Ampleon.pdf