Datasheet4U.com

BLA6G1011-200R - Power LDMOS transistor

Ampleon

📥 Download Datasheet

BLA6G1011-200R Datasheet Preview — Preview of BLA6G1011-200R PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	BLA6G1011-200R
Manufacturer	Ampleon
File Size	355.57 KB
Description	Power LDMOS transistor
Datasheet	BLA6G1011-200R-Ampleon.pdf

BLA6G1011-200R Product details

Description

200 W LDMOS power transistor for avionics applications at frequencies from 1030 MHz to 1090 MHz.

Features

Typical pulsed RF performance at frequencies from 1030 MHz to 1090 MHz, a supply voltage of 28 V and an IDq of 100 mA:.
Output power = 200 W.
Power gain = 20 dB.
Efficiency = 65 %.
Easy power control.
Integrated ESD protection.
Enhanced ruggedness.
High efficiency.
Excellent thermal stability.
Designed for b.

📁 BLA6G1011-200R Similar Datasheet

BLA0912-250 - Avionics LDMOS transistor (NXP)
BLA0912-250R - Avionics LDMOS power transistor (NXP Semiconductors)
BLA10 - 3mm LED STAND-OFF (BEDFORD OPTO TECHNOLOGY)
BLA1011-10 - Avionics LDMOS transistor (NXP)
BLA1011-2 - Avionics LDMOS transistor (NXP)
BLA1011-200 - Avionics LDMOS transistor (NXP)
BLA1011-300 - Avionics LDMOS transistors (NXP)
BLA1011S-200 - Avionics LDMOS transistor (NXP)

Other Datasheets by Ampleon

BLA6G1011L-200RG - Power LDMOS transistor
BLA6G1011LS-200RG - Power LDMOS transistor
BLA6H0912-500 - LDMOS avionics radar power transistor
BLA6H0912L-1000 - LDMOS avionics power transistor
BLA6H0912LS-1000 - LDMOS avionics power transistor
BLA6H1011-600 - LDMOS avionics power transistor

Published: Apr 26, 2018 |