BLF0810-180
BLF0810-180 is Base station LDMOS transistors manufactured by NXP Semiconductors.
URES
- Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 m A. Adjacent channel bandwidth is 30 k Hz, adjacent channel at ± 750 k Hz:
- Output power = 30 W
- Gain = 16 d B
- Efficiency = 27%
- ACPR =
- 46 d Bc at 750 k Hz and BW = 30 k Hz
- Easy power control
- Excellent ruggedness
- High power gain
- Excellent thermal stability
- Designed for broadband operation (800 to 1000 MHz)
- Internally matched for ease of use. PINNING
- SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION
BLF0810-180; BLF0810S-180
APPLICATIONS
- mon source class-AB operation applications in the 860 to 960 MHz frequency range
- CDMA and multicarrier applications. DESCRIPTION 180 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz.
PINNING
- SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION handbook, halfpage
1 3
2 Top view
MBK394
2 Top view
MBL105
Fig.1 Simplified outline SOT502A (BLF0810-180).
Fig.2 Simplified outline SOT502B (BLF0810S-180).
QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION Class-AB (2-tone) CDMA (IS95) f (MHz) f1 = 890.0; f2 = 890.1 890 VDS (V) 27 27 PL (W) 140 (PEP) 30 (AV) Gp (d B) 16 16 ηD (%) 39 27 d3 (d Bc)
- 28
- ACPR 750 (d Bc)
- - 46
2003 Jun 12
..
Philips Semiconductors Product specification
Base station LDMOS transistors
BLF0810-180; BLF0810S-180
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VDS VGS Tstg Tj drain-source voltage gate-source voltage storage temperature junction temperature PARAMETER
- -
- 65
- MIN. MAX. 75 ±15 +150 200 V V C °C...
