BLF0810S-90 Description
BLF0810S-90 APPLICATIONS RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - SOT502B PIN 1 2 3 drain gate source;.
BLF0810S-90 Key Features
- Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel ban
- Output power = 15 W (AV)
- Gain = 16 dB
- Efficiency = 27%
- ACPR = -46 dBc at 750 kHz and BW = 30 kHz
- 70 W CW performance
- Easy power control
- Excellent ruggedness
- High power gain
- Excellent thermal stability
BLF0810S-90 Applications
- RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transis
- SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION