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BLF1046 - UHF power LDMOS transistor

Datasheet Summary

Description

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap.

The common source is connected to the mounting flange.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.

Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on underside eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (HF to 1 GHz).

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Datasheet Details

Part number BLF1046
Manufacturer NXP
File Size 43.17 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF1046 Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 Nov 02 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). APPLICATIONS • Communication transmitter applications in the UHF frequency range. 3 1 BLF1046 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange.
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