BLF1046 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 Nov 02 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor Features - High power gain - Easy power control - Excellent ruggedness - Source on underside eliminates DC isolators, reducing mon mode inductance - Designed for broadband operation (HF to 1 GHz). APPLICATIONS - munication transmitter applications in the UHF frequency range. 3 1 PINNING - SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The mon source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION CW, class-AB (2-tone) CW, class-AB (1-tone) f (MHz) f1 = 960; f2 = 960.1 960 VDS (V) 26 26 CAUTION PL (W) 45 (PEP) 45 2 Top view MBK584 Fig.1 Simplified outline. Gp (d B) >14 >14 ηD (%) >35 >45 dim (d Bc) ≤- 28 - This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor LIMITING VALUES In accordance with the...