BLF1046 Description
DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The mon source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.
BLF1046 Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on underside eliminates DC isolators, reducing mon mode inductance
- Designed for broadband operation (HF to 1 GHz)
BLF1046 Applications
- munication transmitter applications in the UHF frequency range
- SOT467C PIN 1 2 3 drain gate source, connected to flange DESCRIPTION