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BLF1047 - UHF power LDMOS transistor

Datasheet Summary

Description

APPLICATIONS

Communication transmitter applications in the UHF frequency range.

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap.

The common source is connected to the mounting flange.

Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on underside eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (HF to 1 GHz). handbook, halfpage BLF1047.

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Datasheet Details

Part number BLF1047
Manufacturer NXP
File Size 44.91 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF1047 Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET M3D390 BLF1047 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). handbook, halfpage BLF1047 PINNING - SOT541A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION APPLICATIONS • Communication transmitter applications in the UHF frequency range. 1 3 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT541A) with a ceramic cap.
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