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BLF1048 - UHF power LDMOS transistor

Datasheet Summary

Description

Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.

The common source is connected to the mounting flange.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.

Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on underside eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (HF to 1 GHz).

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Datasheet Details

Part number BLF1048
Manufacturer NXP
File Size 45.28 KB
Description UHF power LDMOS transistor
Datasheet download datasheet BLF1048 Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1048 UHF power LDMOS transistor Preliminary specification Supersedes data of 1999 July 01 2000 Feb 02 Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). APPLICATIONS • Communication transmitter applications in the UHF frequency range. 2 3 handbook, halfpage BLF1048 PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 1 DESCRIPTION Top view MBK394 Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT502A) with a ceramic cap.
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