BLF245 Datasheet - NXP

VHF power MOS transistor

BLF245 General Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) g.

BLF245 Datasheet (91.60 KB)

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BLF245

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NXP ↗

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91.60 KB

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Vhf power mos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLF245 VHF power MOS transistor Product speciﬁcation September 1992 Philips Semiconductors Product speciﬁcation.

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BLF245 VHF power MOS transistor NXP

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BLF245 General Description

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