BLF245B transistor equivalent, vhf push-pull power mos transistor.
* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-c.
in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic .
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT279 balanced flange envelope, with a ceramic cap. .
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