BLS7G2729L-350P Datasheet LDMOS S-band radar power transistor

Manufacturer: NXP Semiconductors

Datasheet Details

Part number	BLS7G2729L-350P
Manufacturer	NXP Semiconductors
File Size	134.18 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS7G2729L-350P Datasheet

350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev.

5 — 16 May 2014 Product data sheet 1.

Product profile 1.

High efficiency.
Excellent ruggedness.
Designed for S-band operation (2.7 GHz to 2.9 GHz).
Excellent thermal stability.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

Brand Logo	Part Number	Description	Manufacturer
	BLS7G2729L-350P	LDMOS S-band radar power transistor	Ampleon

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