BLV57 Overview
Key Features
- internally matched input for wideband operation and high power gain
- internal midpoint (r.f. ground) reduces negative feedback and improves power gain
- increased input and output impedances (compared with single-ended transistors) simplify wideband matching
- length of the external emitter leads is not critical
- diffused emitter ballasting resistors for an optimum temperature profile
- gold metallization ensures excellent reliability. DESCRIPTION handbook, halfpage BLV57 PINNING
- Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level
- Power gain compression is 1 dB. WARNING Product and environmental safety
