Description
handbook, halfpage
BLV57
PINNING - SOT161A PIN 1 2 3 4 5 6 7 8 SYMBOL e e c2 b2 c1 b1 e e emitter emitter collector 2 base 2 collector 1 base 1 emitter emitter DESCRIPTION
Two n-p-n silicon planar epitaxial transistor sections in one package to be used as push-pull amplifier, primarily intended f
Features
- internally matched input for wideband operation and high power gain.
- internal midpoint (r. f. ground) reduces negative feedback and improves power gain.
- increased input and output impedances (compared with single-ended transistors) simplify wideband matching.
- length of the external emitter leads is not critical.
- diffused emitter ballasting resistors for an optimum temperature profile.
- gold metallization ensures excellent reliability.
BLV57 Datasheet
