Download BLV57 Datasheet PDF
NXP Semiconductors
BLV57
FEATURES - internally matched input for wideband operation and high power gain - internal midpoint (r.f. ground) reduces negative feedback and improves power gain - increased input and output impedances (pared with single-ended transistors) simplify wideband matching - length of the external emitter leads is not critical - diffused emitter ballasting resistors for an optimum temperature profile - gold metallization ensures excellent reliability. DESCRIPTION handbook, halfpage PINNING - SOT161A PIN 1 2 3 4 5 6 7 8 SYMBOL e e c2 b2 c1 b1 e e emitter emitter collector 2 base 2 collector 1 base 1 emitter emitter DESCRIPTION Two n-p-n silicon planar epitaxial transistor sections in one package to be used as push-pull amplifier, primarily intended for use in linear u.h.f. television transmitters and transposers. The package is an 8-lead flange type with a ceramic cap. All leads are isolated from the flange. 1 3 5 7 2 4 6 8 Top view MBC826 Fig.1 Simplified outline and...