BSH301 transistor equivalent, dual n-channel enhancement mode mos transistor.
* 40 mΩ on-state resistance at 2.5 V gate drive
* RDSon rating down to 1.8 V
* ESD gate protection. APPLICATIONS
* Li-Ion safety switch
* Power manage.
* Li-Ion safety switch
* Power management. DESCRIPTION Two N-channel enhancement mode MOS transistors in an 8-pi.
Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package. PINNING SOT530 (TSSOP8) PIN 1 2 3 4 5 6 7 8 SYMBOL d1 s1 s1 g1 g2 s2 s2 d1 DESCRIPTION drain 1 source 1 source 1 gate 1 gate 2 source 2 source 2 drain 1
1 4
MAM423
BS.
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