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NXP Semiconductors Electronic Components Datasheet

BSR33 Datasheet

PNP medium power transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSR30; BSR31; BSR33
PNP medium power transistors
Product specification
Supersedes data of 1997 Apr 01
1999 Apr 26


NXP Semiconductors Electronic Components Datasheet

BSR33 Datasheet

PNP medium power transistors

No Preview Available !

Philips Semiconductors
PNP medium power transistors
Product specification
BSR30; BSR31; BSR33
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V).
APPLICATIONS
Telephony and general industrial applications
Thick and thin-film circuits.
PINNING
PIN
1
2
3
DESCRIPTION
emitter
collector
base
DESCRIPTION
PNP medium power transistor in a SOT89 plastic
package. NPN complements: BSR40; BSR41 and BSR43.
handbook, halfpage
2
3
1
MARKING
TYPE NUMBER
BSR30
BSR31
BSR33
MARKING CODE
BR1
BR2
BR4
1
Bottom view
2
3
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BSR30; BSR31
BSR33
collector-emitter voltage
BSR30; BSR31
BSR33
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
− −70 V
− −90 V
− −60 V
− −80 V
− −5 V
− −1 A
− −2 A
200
mA
1.35 W
65
+150
°C
150 °C
65
+150
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 26
2


Part Number BSR33
Description PNP medium power transistors
Maker NXP
Total Page 8 Pages
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