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NXP Semiconductors Electronic Components Datasheet

BSR52 Datasheet

NPN Darlington transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BSR52
NPN Darlington transistor
Product specification
Supersedes data of 1997 May 12
1999 Apr 26


NXP Semiconductors Electronic Components Datasheet

BSR52 Datasheet

NPN Darlington transistor

No Preview Available !

Philips Semiconductors
NPN Darlington transistor
Product specification
BSR52
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V)
Integrated diode and resistor.
APPLICATIONS
Industrial high gain amplification.
DESCRIPTION
NPN Darlington transistor in a TO-92; SOT54 plastic
package. PNP complement: BSR62.
PINNING
PIN
1
2
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
1
2
3
2
1
MAM307
3
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
VBE = 0
open collector
Tamb 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
65
65
MAX.
90
80
5
1
2
100
0.83
+150
150
+150
UNIT
V
V
V
A
A
mA
W
°C
°C
°C
1999 Apr 26
2


Part Number BSR52
Description NPN Darlington transistor
Maker NXP
Total Page 8 Pages
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