BU2722 Datasheet | NXP Semiconductors

DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 4.5 2.9 MAX. 1700 825 10 25 45 1.0 3.5 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.0 A f = 64 k Hz ICsat = 4.5 A; f = 64 k Hz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 14 150 6 45 150 150 UNIT V V A A A A m A A W ˚C ˚C average over any 20 ms period Ths ≤ 25 ˚C ESD LIMITING VALUES SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT k V Electrostatic discharge capacitor voltage Human body model (250 p F, 1.5 kΩ) 1 Turn-off current. September 1997 Rev 1.200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2722AF THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink pound with heatsink pound in free air TYP. 35 MAX. 3.7 2.8 UNIT K/W K/W K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths...