BU2722
DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Designed to withstand VCES pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 4.5 2.9 MAX. 1700 825 10 25 45 1.0 3.5 UNIT V V A A W V A µs
Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.0 A f = 64 k Hz ICsat = 4.5 A; f = 64 k Hz
PINNING
- SOT199
PIN 1 2 3 base collector emitter DESCRIPTION
PIN CONFIGURATION case
SYMBOL c b
1 2 3 case isolated e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER...
