BU505F
DESCRIPTION
High-voltage, high-speed, glass-passivated NPN power transistor in a SOT186 package with electrically isolated mounting base. The BU505DF has an integrated efficiency diode. APPLICATIONS
- Horizontal deflection circuits of colour television receivers. PINNING
1 2 3
MBC668
BU505F; BU505DF
2 2 1
MBB008
MBB077
3 a. BU505F. DESCRIPTION b. BU505DF.
PIN 1 2 3 mb base
Front view collector emitter mounting base; electrically isolated from all pins Fig.1 Simplified outline (SOT186) and symbols.
QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU505DF) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Figs 4 and 5 see Figs 4 and 5 Th ≤ 25 °C; see Fig.2 inductive load; see Fig.10 VBE = 0 open base IC = 2 A; IB = 900 m A; see Fig.8 IF = 2 A CONDITIONS
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