Download BU506D Datasheet PDF
NXP Semiconductors
BU506D
DESCRIPTION High-voltage, high-speed, switching NPN power transistor in a TO-220AB package. The BU506D has an integrated efficiency diode. BU506; BU506D 2 2 APPLICATIONS - Horizontal deflection circuits of colour television receivers - Line-operated switch-mode applications. PINNING PIN 1 2 3 DESCRIPTION base collector; connected to mounting base emitter Fig.1 Simplified outline (TO-220AB) and symbols. MBK106 MBB008 1 3 MBB077 1 2 3 a. BU506. b. BU506D. QUICK REFERENCE DATA SYMBOL VCESM VCEO VCEsat VF ICsat IC ICM Ptot tf PARAMETER collector-emitter peak voltage collector-emitter voltage collector-emitter saturation voltage diode forward voltage (BU506D) collector saturation current collector current (DC) collector current (peak value) total power dissipation fall time see Fig.2 see Fig.2 Tmb ≤ 25 °C; see Fig.3 inductive load; see Fig.9 VBE = 0 open base IC = 3 A; IB = 1.33 A; see Fig.6 IF = 3 A; see Fig.10 CONDITIONS - - - 1.5 - - - - 0.7 TYP. MAX. 1500 700 1 - 3 5 8...