BUK663R5-30C Key Features
- AEC Q101 pliant
- Suitable for intermediate level gate drive sources
- Suitable for thermally demanding environments due to 175 °C rating
- Part: BUK663R5-30C
- Manufacturer: NXP Semiconductors (official site)
- Size: 216.48 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BUK663R7-75C | N-channel TrenchMOS FET |
| BUK661R6-30C | N-channel TrenchMOS intermediate level FET |
| BUK661R8-30C | N-channel TrenchMOS intermediate level FET |
| BUK662R5-30C | N-channel TrenchMOS intermediate level FET |
| BUK664R4-55C | N-channel TrenchMOS Intermediate Level FET |
BUK663R5-30C Description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.