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BUK662R5-30C

Manufacturer: NXP Semiconductors

BUK662R5-30C datasheet by NXP Semiconductors.

BUK662R5-30C datasheet preview

BUK662R5-30C Datasheet Details

Part number BUK662R5-30C
Datasheet BUK662R5-30C-NXP.pdf
File Size 172.90 KB
Manufacturer NXP Semiconductors
Description N-channel TrenchMOS intermediate level FET
BUK662R5-30C page 2 BUK662R5-30C page 3

BUK662R5-30C Overview

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

BUK662R5-30C Key Features

  • AEC Q101 pliant
  • Suitable for intermediate level gate
  • Suitable for thermally demanding environments due to 175 °C rating

BUK662R5-30C from other manufacturers

View BUK662R5-30C datasheet index

Brand Logo Part Number Description Other Manufacturers
nexperia Logo BUK662R5-30C N-channel TrenchMOS intermediate level FET nexperia
NXP Semiconductors logo - Manufacturer

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BUK662R5-30C Distributor

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