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BUK662R5-30C - N-channel TrenchMOS intermediate level FET

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NXP

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BUK662R5-30C N-channel TrenchMOS intermediate level FET by NXP - Datasheet Preview — Datasheet preview – BUK662R5-30C

Datasheet Details

Part number	BUK662R5-30C
Manufacturer	NXP
File Size	172.90 KB
Description	N-channel TrenchMOS intermediate level FET
Datasheet	BUK662R5-30C Datasheet
Additional preview pages of the BUK662R5-30C datasheet.

BUK662R5-30C Product details

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

Features

AEC Q101 compliant.
Suitable for intermediate level gate drive sources.
Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Published: Feb 27, 2016 |