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BUK662R5-30C - N-channel TrenchMOS intermediate level FET

Datasheet Summary

Description

Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.

Features

  • AEC Q101 compliant.
  • Suitable for intermediate level gate drive sources.
  • Suitable for thermally demanding environments due to 175 °C rating 1.3.

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Datasheet preview – BUK662R5-30C

Datasheet Details

Part number BUK662R5-30C
Manufacturer nexperia
File Size 924.68 KB
Description N-channel TrenchMOS intermediate level FET
Datasheet download datasheet BUK662R5-30C Datasheet
Additional preview pages of the BUK662R5-30C datasheet.

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Full PDF Text Transcription

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BUK662R5-30C N-channel TrenchMOS intermediate level FET Rev. 2 — 14 October 2010 Product data sheet 1. Product profile 1.1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits „ AEC Q101 compliant „ Suitable for intermediate level gate drive sources „ Suitable for thermally demanding environments due to 175 °C rating 1.
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