BUK662R5-30C Datasheet
BUK662R5-30C Datasheet (NXP Semiconductors)
NXP Semiconductors
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the app.
and benefits
* AEC Q101 compliant
* Suitable for intermediate level gate
drive sources
* Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
* 12 V Automotive systems
* Electric and electro-hydraulic power
steering
* Motors, lamps and solenoid control
* Start-Stop .
BUK662R5-30C Datasheet (Nexperia)
Nexperia
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the app.
and benefits
* AEC Q101 compliant
* Suitable for intermediate level gate
drive sources
* Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
* 12 V Automotive systems
* Electric and electro-hydraulic power
steering
* Motors, lamps and solenoid control
* Start-Stop .