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BUK7880-55 Datasheet, NXP

BUK7880-55 fet equivalent, trenchmos transistor standard level fet.

BUK7880-55 Avg. rating / M : 1.0 rating-12

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BUK7880-55 Datasheet

Features and benefits

very low on-state resistance and has integral zener diodes giving ESD protection. It is intended for use in automotive and general purpose switching applications. BUK788.

Application

BUK7880-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current Total powe.

Description

N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy the device features very low on-state resistance and has integral zener diodes giving ESD protection. I.

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