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BUK7909-75AIE Datasheet - NXP

N-channel TrenchPLUS standard level FET

BUK7909-75AIE Features

* Electrostatically robust due to integrated protection diodes

* Low conduction losses due to low on-state resistance

* Q101 compliant

* Reduced component count due to integrated current sensor

* Suitable for standard level gate drive sources 1.3 Application

BUK7909-75AIE General Description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection. This product has been designed and qualified to the appropriate AEC standar.

BUK7909-75AIE Datasheet (208.36 KB)

Preview of BUK7909-75AIE PDF

Datasheet Details

Part number:

BUK7909-75AIE

Manufacturer:

NXP ↗

File Size:

208.36 KB

Description:

N-channel trenchplus standard level fet.
BUK7909-75AIE N-channel TrenchPLUS standard level FET Rev. 02 17 February 2009 Product data sheet 1. Product profile 1.1 General descri.

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BUK7909-75AIE N-channel TrenchPLUS standard level FET NXP

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