BUW11AF Datasheet | NXP Semiconductors

DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. APPLICATIONS - Converters - Inverters - Switching regulators - Motor control systems. PINNING PIN 1 2 3 mb DESCRIPTION base collector emitter mounting base; electrically isolated Front view MSB012 BUW11F; BUW11AF ook, halfpage handbook, halfpage 2 1 MBB008 Fig.1 Simplified outline (SOT199) and symbol. QUICK REFERENCE DATA SYMBOL VCESM BUW11F BUW11AF VCEO collector-emitter voltage BUW11F BUW11AF VCEsat ICsat collector-emitter saturation voltage collector saturation current BUW11F BUW11AF IC ICM Ptot tf collector current (DC) collector current (peak value) total power dissipation fall time see Figs 2 and 4 tp < 20 ms; see Fig.2 Th ≤ 25 °C; see Fig.3 resistive load; see Figs 8 and 9 3 2.5 5 10 32 0.8 A A A A W µs open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT 1997 Aug 14 Philips Semiconductors Product specification Silicon diffused power transistors THERMAL CHARACTERISTICS SYMBOL Rth j-h Rth j-a Notes 1. Mounted without heatsink pound and 30 ±5 N force on centre of package. 2. Mounted with heatsink pound and 30 ±5 N force on centre of package. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM PARAMETER collector-emitter peak voltage BUW11F BUW11AF VCEO collector-emitter voltage BUW11F BUW11AF ICsat collector saturation current BUW11F BUW11AF IC ICM IB IBM Ptot Tstg Tj Notes 1. Mounted without heatsink pound and 30 ±5 N force on centre of package. 2. Mounted with heatsink pound and 30 ±5 N force on centre of package. ISOLATION CHARACTERISTICS SYMBOL Visol M Cisol PARAMETER isolation voltage from all terminals to external heatsink (peak value) isolation capacitance from collector to external heatsink collector current (DC) collector current (peak value) base current (DC) base current (peak value) total power dissipation storage temperature...