HEF40106B Datasheet | NXP Semiconductors

INTEGRATED CIRCUITS DATA SHEET For a plete data sheet, please also download: - The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC - The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC HEF40106B gates Hex inverting Schmitt trigger Product specification File under Integrated Circuits, IC04 January 1995 Philips Semiconductors Product specification Hex inverting Schmitt trigger DESCRIPTION Each circuit of the HEF40106B functions as an inverter with Schmitt-trigger action. The Schmitt-trigger switches at different points for the positive and negative-going input signals. The difference between the positive-going voltage (VP) and the negative-going voltage (VN) is defined as hysteresis voltage (VH). This device may be used for enhanced noise immunity or to “square up” slowly changing waveforms. HEF40106B gates Fig.2 Pinning diagram. HEF40106BP(N): 14-lead DIL; plastic (SOT27-1) HEF40106BD(F): 14-lead DIL; ceramic (cerdip) (SOT73) HEF40106BT(D): 14-lead SO; plastic (SOT108-1) ( ): Package Designator North America Fig.1 Functional diagram. Fig.3 Logic diagram (one inverter). FAMILY DATA, IDD LIMITS category GATES See Family Specifications January 1995 Philips Semiconductors Product specification Hex inverting Schmitt trigger DC CHARACTERISTICS VSS = 0 V; Tamb = 25 °C VDD V Hysteresis voltage Switching levels positive-going input voltage negative-going input voltage 5 10 15 5 10 15 5 10 15 VN VP VH SYMBOL MIN. 0,5 0,7 0,9 2 3,7 4,9 1,5 3 4 TYP. 0,8 1,3 1,8 3,0 5,8 8,3 2,2 4,5 6,5 HEF40106B gates MAX. V V V 3,5 7 11 3 6,3 10,1 V V V V V V Fig.5 Fig.4 Transfer characteristic. Waveforms showing definition of VP, VN and VH, where VN and VP are between limits of 30% and 70%. January 1995 Philips Semiconductors Product specification Hex inverting Schmitt...