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IRFZ24N - N-channel enhancement mode TrenchMOS transistor

NXP

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Datasheet Details

Part number	IRFZ24N
Manufacturer	NXP
File Size	191.46 KB
Description	N-channel enhancement mode TrenchMOS transistor
Datasheet	IRFZ24N_PhilipsSemiconductors.pdf

IRFZ24N Product details

Description

N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.

Features

very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power supplies and general purpose switching.

📁 IRFZ24N Similar Datasheet

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Other Datasheets by NXP

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Published: Oct 17, 2006 |