IRFZ44N
Description
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.
Key Features
- very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV
- It is intended for use in switched mode power supplies and general purpose switching applications
- 55 49 110 175 22 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION
Representative IRFZ44N image (package may vary by manufacturer)
