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NXP Semiconductors Electronic Components Datasheet

J112 Datasheet

N-channel silicon field-effect transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
J111; J112; J113
N-channel silicon field-effect
transistors
Product specification
File under Discrete Semiconductors, SC07
July 1993


NXP Semiconductors Electronic Components Datasheet

J112 Datasheet

N-channel silicon field-effect transistors

No Preview Available !

Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
J111; J112; J113
DESCRIPTION
Symmetrical silicon n-channel
junction FETs in plastic TO-92
envelopes. They are intended for
applications such as analog switches,
choppers, commutators etc.
FEATURES
High speed switching
Interchangeability of drain and
source connections
Low RDS on at zero gate voltage
PINNING
1 = gate
2 = source
3 = drain
Note: Drain and source are
interchangeable.
handbook, half1pa2ge
3
g
MAM042
d
s
Fig.1 Simplified outline and symbol, TO-92.
QUICK REFERENCE DATA
Drain-source voltage
Drain current
VDS = 15 V; VGS = 0
Total power dissipation
up to Tamb = 50 °C
Gate-source cut-off voltage
VDS = 5 V; ID = 1 µA
Drain-source on-state resistance
VDS = 0.1 V; VGS = 0
±VDS
max.
IDSS
min.
Ptot
VGS off
max.
min.
max.
RDS on
max.
J111
40
J112
40
J113
40 V
20 5 2 mA
400 400
31
10 5
400 mW
0.5 V
3V
30 50 100
July 1993
2


Part Number J112
Description N-channel silicon field-effect transistors
Maker NXP
Total Page 6 Pages
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