MM912J637AV1EP Datasheet | NXP Semiconductors

NXP Semiconductors Data Sheet: Technical Data Document Number: MM912_637D1 Rev. 5.0, 8/2016 Intelligent integrated precision battery sensor MM912_637 The MM912I637 (96 k B) and MM912J637 (128 k B) are fully integrated LIN Battery monitoring devices, based on NXP SMARTMOS and S12 MCU Technology. The device supports precise current measurement via an external shunt resistor, and precise battery voltage measurement via a series resistor directly at the battery plus pole. The integrated temperature sensor bined in the close proximity to the battery, allows battery temperature measurement. The integrated LIN 2.1 interface makes the sensor feedback available on the LIN Bus. Features - Battery voltage measurement - Battery current measurement in up to 8 ranges - On chip temperature measurement - Normal and two low-power modes - Current threshold detection and current averaging in standby => wake-up from low-power mode - Triggered wake-up from LIN and periodic wake-up - Signal low pass filtering (current, voltage) - PGA (programmable low-noise gain amplifier) with automatic gain control - Accurate internal oscillator (an external quartz oscillator may be used for extended accuracy) - munication via a LIN 2.1, LIN2.0 bus interface - S12 microcontroller with 128 k Byte flash, 6.0 k Byte RAM, 4.0 k Byte data flash - Background debug module - External temperature sensor option (TSUP, VTEMP) - Optional 2nd external voltage sense input (VOPT) - 4 x 5.0 V GPIO including one wake-up capable high voltage input (PTB3/L0) - 8 x MCU general purpose I/O including SPI functionality - Industry standard EMC pliance Battery Monitoring System EP SUFFIX (WF-TYPE) 98ASA00343D 48-PIN QFN Applications - 12 V Lead-acid battery monitoring ADC...