MRF101BN
MRF101BN is RF Power LDMOS Transistors manufactured by NXP Semiconductors.
- Part of the MRF101AN comparator family.
- Part of the MRF101AN comparator family.
Features
- Mirror pinout versions (A and B) to simplify use in a push--pull, two--up configuration
- Characterized from 30 to 50 V
- Suitable for linear application
- Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
Typical Applications
- Industrial, scientific, medical (ISM)
- Radio and VHF TV broadcast
- Laser generation
- Plasma etching
- Particle accelerators
- HF and VHF munications
- Switch mode power supplies
- MRI and other medical applications
- Industrial heating, welding and drying systems
2018- 2019 NXP B.V.
RF Device Data NXP Semiconductors
MRF101AN MRF101BN 1
Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C
Derate above 25C
Symbol VDSS VGS VDD Tstg TC TJ PD
Value
- 0.5, +133
- 6.0, +10
- 65 to +150
- 40 to +150
- 40 to +175
182 0.91
Unit Vdc Vdc...
