Datasheet4U Logo Datasheet4U.com

MRF101BN, MRF101AN RF Power LDMOS Transistors

MRF101BN Description

NXP Semiconductors Technical Data Document Number: MRF101AN Rev.1, 05/2019 RF Power LDMOS Transistors High Ruggedness N *Channel Enhancement.

MRF101BN Features

* Mirror pinout versions (A and B) to simplify use in a push
* pull, two
* up configuration
* Characterized from 30 to 50 V

MRF101BN Applications

* The devices are extremely rugged and exhibit high performance up to 250 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 (5) 87.5
* 108 (6,7) 136
* 174 (7,8) 230 (9) CW CW CW CW CW CW CW Pulse

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: MRF101BN, MRF101AN. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
MRF101BN, MRF101AN
Manufacturer
NXP ↗
File Size
836.13 KB
Datasheet
MRF101AN-NXP.pdf
Description
RF Power LDMOS Transistors
Note
This datasheet PDF includes multiple part numbers: MRF101BN, MRF101AN.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • MRF10120 - MICROWAVE POWER TRANSISTORS (Tyco)
  • MRF10150 - MICROWAVE POWER TRANSISTORS (Tyco)
  • MRF1015Mx - MICROWAVE POWER TRANSISTORS (Motorola)
  • MRF10005 - The RF Line Microwave Power Transistor (Tyco)
  • MRF1000MB - Microwave Pulse Power Transistors (Tyco)
  • MRF1001A - RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS (Microsemi)
  • MRF1002 - MICROWAVE POWER TRANSISTOR (Motorola)
  • MRF10031 - MICROWAVE POWER TRANSISTOR (Motorola)

📌 All Tags

Power LDMOS Transistors NXP
NXP MRF101BN-like datasheet