Datasheet Details
| Part number | MRF300AN |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 1.25 MB |
| Description | RF Power LDMOS Transistors |
| Download | MRF300AN Download (PDF) |
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| Part number | MRF300AN |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 1.25 MB |
| Description | RF Power LDMOS Transistors |
| Download | MRF300AN Download (PDF) |
|
|
|
NXP Semiconductors Technical Data RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications.
The devices are extremely rugged and exhibit high performance up to 250 MHz.
Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout Gps D (W) (dB) (%) 13.56 (1) 27 (2) 40.68 (3) 50 (4) 81.36 (5) 144 (6) 230 (7) CW Pulse (100 sec, 20% Duty Cycle) 320 CW 330 CW 330 CW 320 CW 325 CW 320 CW 330 Peak 28.1 27.4 28.2 27.3 25.1 23.0 20.4 79.7 80.0 79.0 73.0 77.5 73.0 75.5 Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin Test (W) Voltage Result 40.68 Pulse > 65:1 at all 2 Peak 50 No Device (100 sec, 20% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 230 Pulse > 65:1 at all 6 Peak 50 No Device (100 sec, 20% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 1.
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