Datasheet4U Logo Datasheet4U.com

MRF6V2010NB - RF Power FET

Download the MRF6V2010NB datasheet PDF. This datasheet also covers the MRF6V2010N variant, as both devices belong to the same rf power fet family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6V2010N-NXP.pdf) that lists specifications for multiple related part numbers.

Overview

NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz.

Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

 Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain — 23.

Key Features

  • Characterized with series equivalent large--signal impedance parameters.
  • Qualified up to a maximum of 50 VDD operation.
  • Integrated ESD protection.
  • 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Freescale Semiconductor Logo MRF6V2010NBR1 RF Power Field Effect Transistor Freescale Semiconductor
Freescale Semiconductor Logo MRF6V2010NR1 RF Power Field Effect Transistor Freescale Semiconductor

More Datasheets from NXP Semiconductors

Part Number Description
MRF6V2010N RF Power FET
MRF6V2010GN RF Power FET
MRF6V2300NBR1 RF Power FET
MRF6V2300NR1 RF Power FET
MRF6V12500GS RF Power LDMOS Transistors
MRF6V12500H RF Power LDMOS Transistors
MRF6V12500HS RF Power LDMOS Transistors
MRF6V14300HR3 RF Power Field Effect Transistors
MRF6V14300HSR3 RF Power Field Effect Transistors
MRF6VP11KGSR5 RF Power FET