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NXP Semiconductors Electronic Components Datasheet

MRF6VP3450HR5 Datasheet

RF Power FET

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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 470 to 860 MHz. The high gain and broadband performance
of these devices make them ideal for large--signal, common--source amplifier
applications in 50 volt analog or digital television transmitter equipment.
Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM
Power Gain — 22.5 dB
Drain Efficiency — 28%
ACPR @ 4 MHz Offset — --62 dBc @ 4 kHz Bandwidth
Typical Broadband Two--Tone Performance: VDD = 50 Volts, IDQ = 1400 mA,
Pout = 450 Watts PEP, f = 470--860 MHz
Power Gain — 22 dB
Drain Efficiency — 44%
IM3 — --29 dBc
Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz:
450 Watts CW
90 Watts Avg. (DVB--T OFDM Signal, 10 dB PAR, 7.61 MHz Channel
Bandwidth)
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
Internally Input Matched for Ease of Use
Qualified Up to a Maximum of 50 VDD Operation
Integrated ESD Protection
Designed for Push--Pull Operation
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
RoHS Compliant
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Document Number: MRF6VP3450H
Rev. 4, 4/2010
MRF6VP3450HR6
MRF6VP3450HR5
MRF6VP3450HSR6
MRF6VP3450HSR5
860 MHz, 450 W, 50 V
LATERAL N--CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D--05, STYLE 1
NI--1230
MRF6VP3450HR6(HR5)
CASE 375E--04, STYLE 1
NI--1230S
MRF6VP3450HSR6(HSR5)
PARTS ARE PUSH--PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
Table 1. Maximum Ratings
(Top View)
Figure 1. Pin Connections
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +110
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Storage Temperature Range
Tstg
-- 65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
© Freescale Semiconductor, Inc., 2008--2010. All rights reserMveRd.F6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
RF Device Data
Freescale Semiconductor
1


NXP Semiconductors Electronic Components Datasheet

MRF6VP3450HR5 Datasheet

RF Power FET

No Preview Available !

Table 2. Thermal Characteristics
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 44°C, 450 W CW
Case Temperature 62°C, 450 W Pulsed, 50 μsec Pulse Width, 2.5% Duty Cycle
RθJC
ZθJC
0.27
0.25
0.04
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1B (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (3)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
Drain--Source Breakdown Voltage
(ID = 50 mA, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 50 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 100 Vdc, VGS = 0 Vdc)
IGSS
V(BR)DSS
110
IDSS
IDSS
10
μAdc
Vdc
10
μAdc
10
μAdc
On Characteristics
Gate Threshold Voltage (3)
(VDS = 10 Vdc, ID = 320 μAdc)
VGS(th)
1
1.6
2.5
Vdc
Gate Quiescent Voltage (4)
(VDD = 50 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2
2.6
3.5
Vdc
Drain--Source On--Voltage (3)
(VGS = 10 Vdc, ID = 1.58 Adc)
VDS(on)
0.25
Vdc
Dynamic Characteristics (3,5)
Reverse Transfer Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
0.92
pF
Output Capacitance
(VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
54.5
pF
Input Capacitance
(VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
373
pF
Functional Tests (4) (In Freescale Broadband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, Pout = 90 W Avg., f = 860 MHz,
DVB--T OFDM Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
Power Gain
Gps
21.5
22.5
24.5
dB
Drain Efficiency
ηD
26
28
%
Adjacent Channel Power Ratio
ACPR
--62
--59
dBc
Input Return Loss
IRL
--4
--2
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
3. Each side of device measured separately.
4. Measurement made with device in push--pull configuration.
5. Part internally input matched.
(continued)
MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5
2
RF Device Data
Freescale Semiconductor


Part Number MRF6VP3450HR5
Description RF Power FET
Maker NXP
Total Page 3 Pages
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