MRF6VP3450HR5 Datasheet | NXP Semiconductors

Features - Characterized with Series Equivalent Large--Signal Impedance Parameters - Internally Input Matched for Ease of Use - Qualified Up to a Maximum of 50 VDD Operation - Integrated ESD Protection - Designed for Push--Pull Operation - Greater Negative Gate--Source Voltage Range for Improved Class C Operation - Ro HS pliant - In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. Document Number: MRF6VP3450H Rev. 4, 4/2010 MRF6VP3450HR6 MRF6VP3450HR5 MRF6VP3450HSR6 MRF6VP3450HSR5 860 MHz, 450 W, 50 V LATERAL N--CHANNEL BROADBAND RF POWER MOSFETs CASE 375D--05, STYLE 1 NI--1230 MRF6VP3450HR6(HR5) CASE 375E--04, STYLE 1 NI--1230S MRF6VP3450HSR6(HSR5) PARTS ARE PUSH--PULL RFin A/VGSA 3 1 RFout A/VDSA RFin B/VGSB 4 2 RFout B/VDSB Table 1. Maximum Ratings (Top View) Figure 1. Pin Connections Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +110 Vdc Gate--Source Voltage --6.0, +10 Vdc Storage Temperature...