MRF6VP3450HSR6 Datasheet PDF - NXP RF Power FET Specs

MRF6VP3450HSR6 - RF Power FET

This page provides the datasheet information for the MRF6VP3450HSR6, a member of the MRF6VP3450HR6 RF Power FET family.

Datasheet Summary

Features

Characterized with Series Equivalent Large--Signal Impedance Parameters.
Internally Input Matched for Ease of Use.
Qualified Up to a Maximum of 50 VDD Operation.
Integrated ESD Protection.
Designed for Push--Pull Operation.
Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
RoHS Compliant.
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

Datasheet Details

Part number	MRF6VP3450HSR6
Manufacturer	NXP
File Size	1.12 MB
Description	RF Power FET
Datasheet	MRF6VP3450HSR6 Datasheet
Additional preview pages of the MRF6VP3450HSR6 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these devices make them ideal for large--signal, common--source amplifier applications in 50 volt analog or digital television transmitter equipment. • Typical DVB--T OFDM Performance: VDD = 50 Volts, IDQ = 1400 mA, Pout = 90 Watts Avg., f = 860 MHz, 8K Mode, 64 QAM Power Gain — 22.

Published: Jul 10, 2020 |