MW7IC2725NBR1 Datasheet | NXP Semiconductors

Features - 100% PAR Tested for Guaranteed Output Power Capability - Characterized with Series Equivalent Large-Signal Impedance Parameters and mon Source S-Parameters - On-Chip Matching (50 Ohm Input, DC Blocked) - Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1) - Integrated ESD Protection - 225°C Capable Plastic Package - Ro HS pliant - In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VDS1 RFin VGS1 Quiescent Current VGS2 Temperature pensation (1) VDS1 Figure 1. Functional Block Diagram RFout/VDS2 MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1 2500-2700 MHz, 4 W AVG., 28 V Wi MAX RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1886-01 TO-270 WB-16 PLASTIC MW7IC2725NR1 CASE 1887-01 TO-270 WB-16 GULL PLASTIC MW7IC2725GNR1 CASE 1329-09 TO-272 WB-16 PLASTIC MW7IC2725NBR1 VDS1 RFin VGS1 VGS2 VDS1 GND 11 16 GND 15...