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NXP Semiconductors Electronic Components Datasheet

MW7IC2725NBR1 Datasheet

Power Amplifier

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Freescale Semiconductor
Technical Data
Document Number: MW7IC2725N
Rev. 3, 1/2010
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2725N wideband integrated circuit is designed with on- chip
matching that makes it usable from 2300- 2700 MHz. This multi- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA,
Pout = 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
ąPower Gain — 28.5 dB
ąPower Added Efficiency — 17%
ąDevice Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ąACPR @ 8.5 MHz Offset — -50 dBc in 1 MHz Channel Bandwidth
Driver Applications
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 77 mA, IDQ2 = 275 mA,
Pout = 26 dBm Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4,
4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01%
Probability on CCDF.
ąPower Gain — 27.8 dB
ąPower Added Efficiency — 3.2%
ąDevice Output Signal PAR — 9 dB @ 0.01% Probability on CCDF
ąACPR @ 8.5 MHz Offset — -56 dBc in 1 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 40 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Stable into a 5:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 5 W CW
Pout
Typical Pout @ 1 dB Compression Point ] 25 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
225°C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
VDS1
RFin
VGS1
Quiescent Current
VGS2
Temperature Compensation (1)
VDS1
Figure 1. Functional Block Diagram
RFout/VDS2
MW7IC2725NR1
MW7IC2725GNR1
MW7IC2725NBR1
2500-2700 MHz, 4 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1886-01
TO-270 WB-16
PLASTIC
MW7IC2725NR1
CASE 1887-01
TO-270 WB-16 GULL
PLASTIC
MW7IC2725GNR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW7IC2725NBR1
GND
1
VDS1
2
NC
3
NC
4
NC
5
RFin
6
NC
7
VGS1
8
VGS2
9
VDS1
10
GND 11
16 GND
15 NC
14
RFout/VDS2
13 NC
12 GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
ăĂ1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current
Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977
or AN1987.
© Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
1


NXP Semiconductors Electronic Components Datasheet

MW7IC2725NBR1 Datasheet

Power Amplifier

No Preview Available !

Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
-0.5, +65
-0.5, +10
32, +0
-ā65 to +150
150
225
22
Value (2,3)
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
WiMAX Application
Stage 1, 28 Vdc, IDQ1 = 77 mA
5.9
(Case Temperature 75°C, Pout = 4 W Avg.)
Stage 2, 28 Vdc, IDQ2 = 275 mA
1.4
CW Application
Stage 1, 28 Vdc, IDQ1 = 77 mA
5.5
(Case Temperature 81°C, Pout = 25 W CW)
Stage 2, 28 Vdc, IDQ2 = 275 mA
1.3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1B (Minimum)
Machine Model (per EIA/JESD22-A115)
A (Minimum)
Charge Device Model (per JESD22-C101)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate-Source Leakage Current
(VGS = 1.5 Vdc, VDS = 0 Vdc)
IDSS
10
μAdc
IDSS
1
μAdc
IGSS
1
μAdc
Stage 1 - On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 20 μAdc)
VGS(th)
1.2
1.9
2.7
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, IDQ1 = 77 mA)
VGS(Q)
2.7
Vdc
Fixture Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 77 mAdc, Measured in Functional Test)
VGG(Q)
12.5
15.8
19.5
Vdc
ăĂ1. Continuous use at maximum temperature will affect MTTF.
Ăă2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Ăă3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW7IC2725NR1 MW7IC2725GNR1 MW7IC2725NBR1
2
RF Device Data
Freescale Semiconductor


Part Number MW7IC2725NBR1
Description Power Amplifier
Maker NXP
Total Page 3 Pages
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