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MW7IC2725NBR1 Datasheet

Manufacturer: NXP Semiconductors

This datasheet includes multiple variants, all published together in a single manufacturer document.

MW7IC2725NBR1 datasheet preview

Datasheet Details

Part number MW7IC2725NBR1
Datasheet MW7IC2725NBR1 MW7IC2725NR1 Datasheet (PDF)
File Size 1.02 MB
Manufacturer NXP Semiconductors
Description Power Amplifier
MW7IC2725NBR1 page 2 MW7IC2725NBR1 page 3

MW7IC2725NBR1 Overview

Freescale Semiconductor Technical Data Document Number: 3, 1/2010 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2725N wideband integrated circuit is designed with on- chip matching that makes it usable from 2300- 2700 MHz. This multi- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

MW7IC2725NBR1 Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • On-Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated ESD Protection
  • 225°C Capable Plastic Package
  • RoHS pliant
  • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
  • AN1977 or AN1987
NXP Semiconductors logo - Manufacturer

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