Overview: Freescale Semiconductor Technical Data Document Number: MW7IC2750N Rev. 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 -- 2700 MHz. This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA, Pout = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 26 dB Power Added Efficiency — 17% Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF ACPR @ 8.5 MHz Offset — --49 dBc in 1 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 80 Watts CW Output Power (3 dB Input Overdrive from Rated Pout)
• Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 W CW Pout • Typical Pout @ 1 dB pression Point ≃ 50 Watts CW
Driver Applications • PTyoputic=al4WWiMatAtsXAPvegr.,fofr=m2a7n0ce0:MVHDDz,=O2F8DVMol8ts0,2I.D1Q61d,=6146Q0 AmMA,3/I4D,Q42 = 550 mA, Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. Power Gain — 26 dB Power Added Efficiency — 11% Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF ACPR @ 8.
