MW7IC2750NBR1 Description
Freescale Semiconductor Technical Data Document Number: 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 -- 2700 MHz. This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.
MW7IC2750NBR1 Key Features
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large--Signal Impedance Parameters and mon Source S--Parameters
- On--Chip Matching (50 Ohm Input, DC Blocked)
- Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- 225°C Capable Plastic Package
- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel