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MW7IC2750NR1

Manufacturer: NXP Semiconductors

MW7IC2750NR1 datasheet by NXP Semiconductors.

MW7IC2750NR1 datasheet preview

MW7IC2750NR1 Datasheet Details

Part number MW7IC2750NR1
Datasheet MW7IC2750NR1-NXP.pdf
File Size 1.12 MB
Manufacturer NXP Semiconductors
Description Power Amplifier
MW7IC2750NR1 page 2 MW7IC2750NR1 page 3

MW7IC2750NR1 Overview

Freescale Semiconductor Technical Data Document Number: 4, 10/2011 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2750N wideband integrated circuit is designed with on--chip matching that makes it usable from 2300 -- 2700 MHz. This multi -- stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base station modulation formats.

MW7IC2750NR1 Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large--Signal Impedance Parameters and mon Source S--Parameters
  • On--Chip Matching (50 Ohm Input, DC Blocked)
  • Integrated Quiescent Current Temperature pensation with Enable/Disable Function (1)
  • Integrated ESD Protection
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation
  • 225°C Capable Plastic Package
  • In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel
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