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NXP Semiconductors Electronic Components Datasheet

MW7IC2750NR1 Datasheet

Power Amplifier

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Freescale Semiconductor
Technical Data
Document Number: MW7IC2750N
Rev. 4, 10/2011
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2750N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2300 -- 2700 MHz. This multi -- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
Typical WiMAX Performance: VDD = 28 Volts, IDQ1 = 160 mA, IDQ2 = 550 mA,
Pout = 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM 3/4, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 26 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --49 dBc in 1 MHz Channel Bandwidth
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 80 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout)
Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 W CW Pout
Typical Pout @ 1 dB Compression Point 50 Watts CW
Driver Applications
PTyoputic=al4WWiMatAtsXAPvegr.,fofr=m2a7n0ce0:MVHDDz,=O2F8DVMol8ts0,2I.D1Q61d,=6146Q0 AmMA,3/I4D,Q42
= 550 mA,
Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 26 dB
Power Added Efficiency — 11%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --57 dBc in 1 MHz Channel Bandwidth
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
On--Chip Matching (50 Ohm Input, DC Blocked)
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
225°C Capable Plastic Package
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
VDS1
RFin
RFout/VDS2
VGS1
Quiescent Current
VGS2
Temperature Compensation (1)
Figure 1. Functional Block Diagram
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
2500--2700 MHz, 8 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618--02
TO--270 WB--14
PLASTIC
MW7IC2750NR1
CASE 1621--02
TO--270 WB--14 GULL
PLASTIC
MW7IC2750GNR1
CASE 1617--02
TO--272 WB--14
PLASTIC
MW7IC2750NBR1
VDS1
1
VGS2
2
VGS1
3
NC 4
NC 5
RFin 6
RFin 7
NC 8
NC 9
VGS1 10
VGS2 11
VDS1 12
14
RFout /VDS2
13
RFout /VDS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2008, 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
1


NXP Semiconductors Electronic Components Datasheet

MW7IC2750NR1 Datasheet

Power Amplifier

No Preview Available !

Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature (1,2)
Input Power
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW Application
(Case Temperature 80°C, Pout = 50 W CW)
Stage 1, 28 Vdc, IDQ1 = 160 mA
Stage 2, 28 Vdc, IDQ2 = 550 mA
Symbol
VDS
VGS
VDD
Tstg
TC
TJ
Pin
Symbol
RθJC
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
30
Value (2,3)
3.0
0.7
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Unit
°C/W
Final Application
Stage 1, 28 Vdc, IDQ1 = 160 mA
2.9
(Case Temperature 70°C, Pout = 8 W CW)
Stage 2, 28 Vdc, IDQ2 = 550 mA
0.7
Driver Application
Stage 1, 28 Vdc, IDQ1 = 160 mA
2.8
(Case Temperature 65°C, Pout = 4 W CW)
Stage 2, 28 Vdc, IDQ2 = 550 mA
0.7
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1C
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IDSS
10
μAdc
IDSS
1
μAdc
IGSS
1
μAdc
Stage 1 — On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 46 μAdc)
VGS(th)
1
2
3
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, IDQ1 = 160 mA, Measured in Functional Test)
VGS(Q)
3
3.8
4.5
Vdc
Stage 1 — Dynamic Characteristics (4)
Input Capacitance
(VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
550
pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
(continued)
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
RF Device Data
2
Freescale Semiconductor, Inc.


Part Number MW7IC2750NR1
Description Power Amplifier
Maker NXP
Total Page 3 Pages
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