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PBSS2540E - 500 mA NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.

PNP complement: PBS3540E.

Key Features

  • s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription for PBSS2540E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for PBSS2540E. For precise diagrams, and layout, please refer to the original PDF.

PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Rev. 01 — 4 May 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description NPN low VCEs...

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duct data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) 1.