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PBSS2540MB - NPN transistor

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS3540MB.

Key Features

  • Leadless ultra small SMD plastic package.
  • Low package height of 0.37 mm.
  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS2540MB 40 V, 0.5 A NPN low VCEsat (BISS) transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540MB. 1.2 Features and benefits  Leadless ultra small SMD plastic package  Low package height of 0.37 mm  Low collector-emitter saturation voltage VCEsat  High collector current capability IC and ICM 1.3 Applications  DC-to-DC conversion  Supply line switching  Battery charger  High efficiency due to less heat generation  AEC-Q101 qualified  Reduced Printed-Circuit Board (PCB) requirements  LCD backlighting  Drivers in low supply voltage applications (e.g.