Datasheet Summary
40 V, 0.5 A NPN low VCEsat (BISS) transistor
Rev. 1
- 4 April 2012
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.
PNP plement: PBSS3540MB.
1.2 Features and benefits
- Leadless ultra small SMD plastic package
- Low package height of 0.37 mm
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and
1.3 Applications
- DC-to-DC conversion
- Supply line switching
- Battery charger
- High efficiency due to less heat generation
- AEC-Q101 qualified
- Reduced...
