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PBSS2540F Datasheet 40 V Low V NPN Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat NPN.

General Description

handbook, halfpage PBSS2540F QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

40 500 1 <500 UNIT V mA A mΩ 3 3 1 2 MAM410 NPN low VCEsat transistor in a SC-89 (SOT490) plastic package.

PNP complement: PBSS3540F.

Key Features

  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved thermal behaviour due to flat leads.
  • Enhanced performance over SOT23 general purpose transistors.

PBSS2540F Distributor