PBSS2540M Datasheet | NXP Semiconductors

FEATURES - Low collector-emitter saturation voltage VCEsat - High collector current capability IC and ICM - High efficiency leading to reduced heat generation - Reduced printed-circuit board requirements. APPLICATIONS - Power management: - DC-DC converter - Supply line switching - Battery charger - LCD backlighting. - Peripheral driver: - Driver in low supply voltage applications (e.g. lamps and LEDs). - Inductive load drivers (e.g. relays, buzzers and motors). handbook, halfpage QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V m A A mΩ 3 3 1 2 DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP plement: PBSS3540M. MARKING TYPE NUMBER PBSS2540M MARKING CODE DC 1 Bottom view MAM475 Fig.1 Simplified outline (SOT883) and symbol. 2003 Jul 22 Data Sheet 4 U . .. Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Notes 1. Refer to SOT883 standard mounting conditions. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; notes 1 and 2 Tamb ≤ 25 °C; note 1 and 3 CONDITIONS open emitter open base open collector notes 1 and 2 - - - - - - - - - 65 - - 65 MIN. MAX. 40 40 6 500 1 100 250 430 +150 150 +150 V V V UNIT m A A m A m W m W °C °C °C 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting...