PBSS2540M Description
PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V mA A mΩ 3 3 1 2 DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. MARKING TYPE NUMBER PBSS2540M MARKING CODE DC 2 1 Bottom view MAM475 Fig.1 Simplified outline (SOT883) and symbol.
PBSS2540M Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability IC and ICM
- High efficiency leading to reduced heat generation
- Reduced printed-circuit board requirements