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PBSS2540M-Q - 40V 0.5A NPN low VCEsat transistor

General Description

NPN low VCEsat transistor in a SOT883 small Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency due to less heat generation.
  • Reduced printed-circuit board requirements.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

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Datasheet Details

Part number PBSS2540M-Q
Manufacturer Nexperia
File Size 204.79 KB
Description 40V 0.5A NPN low VCEsat transistor
Datasheet download datasheet PBSS2540M-Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS2540M-Q 40 V, 0.5 A NPN low VCEsat transistor 21 July 2025 Product data sheet 1. General description NPN low VCEsat transistor in a SOT883 small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3540M-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency due to less heat generation • Reduced printed-circuit board requirements • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • Power management: • DC-DC converter • Supply line switching • Battery charger • LCD backlighting. • Peripheral driver: • Driver in low supply voltage applications (e.g. lamps and LEDs). • Inductive load drivers (e.g. relays, buzzers and motors). 4.