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PBSS2540E - 500 mA NPN low VCEsat (BISS) transistor

General Description

NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package.

PNP complement: PBS3540E.

Key Features

  • s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS2540E 40 V, 500 mA NPN low VCEsat (BISS) transistor Rev. 01 — 4 May 2005 www.DataSheet4U.com Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMD plastic package. PNP complement: PBS3540E. 1.2 Features s s s s s Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s s s s s DC-to-DC conversion MOSFET gate driving Motor control Charging circuits Low power switches (e.g. motors, fans) 1.