PBSS2540M transistor equivalent, 0.5 a npn low vcesat (biss) transistor.
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* High efficiency leading to reduced heat generation
* Re.
* Power management:
– DC-DC converter
– Supply line switching
– Batt.
PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 40 500 1 <500 UNIT V mA A mΩ
3 3 1 2
DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complem.
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