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PBSS2540M Datasheet 0.5 A NPN low VCEsat (BISS) transistor

Manufacturer: NXP Semiconductors

General Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

40 500 1 <500 UNIT V mA A mΩ 3 3 1 2 DESCRIPTION Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package.

PNP complement: PBSS3540M.

Overview

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product specification 2003 Jul 22 DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors Product specification 40 V, 0.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency leading to reduced heat generation.
  • Reduced printed-circuit board requirements.