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PBSS4032SN - 5.7A NPN/NPN Low V_CEsat (BISS) Transistor

Datasheet Summary

Description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Features

  • Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Datasheet Details

Part number PBSS4032SN
Manufacturer NXP
File Size 190.45 KB
Description 5.7A NPN/NPN Low V_CEsat (BISS) Transistor
Datasheet download datasheet PBSS4032SN Datasheet
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DataSheet.in PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4032SN SOT96-1 Name SO8 PNP/PNP complement PBSS4032SP NPN/PNP complement PBSS4032SPN Type number 1.2 Features and benefits „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.
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