* Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit
PBSS4032SN Datasheet (190.45 KB)
PBSS4032SN
190.45 KB
5.7a npn/npn low v_cesat (biss) transistor.
DataSheet.in PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 1 14 July 2010 Product data sheet 1. Product profile 1.1 Gen.
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