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PBSS4032SPN - 30V NPN/PNP low VCEsat (BISS) transistor

General Description

NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Key Features

  • Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription (Reference)

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DataSheet.in PBSS4032SPN 30 V NPN/PNP low VCEsat (BISS) transistor Rev. 1 — 14 July 2010 Product data sheet 1. Product profile 1.1 General description NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4032SPN SOT96-1 Name SO8 NPN/NPN complement PBSS4032SN PNP/PNP complement PBSS4032SP Type number 1.2 Features and benefits „ „ „ „ „ „ Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.