Datasheet Summary
DataSheet.in
30 V, 2.4 A PNP low VCEsat (BISS) transistor
Rev. 01
- 18 December 2009 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN plement: PBSS4032NT.
1.2 Features
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- Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
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