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PBSS4032PD Datasheet 2.7a PNP Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: DataSheet.in PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 — 27 January 2010 Product data sheet 1. Product profile 1.

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4032ND.

1.2

Key Features

  • Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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