Datasheet Summary
..
30 V, 4.2 A PNP low VCEsat (BISS) transistor
Rev. 01
- 1 April 2010 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. NPN plement: PBSS4032NX.
1.2 Features and benefits
- -
- -
- -
- Very low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional...
