PBSS4032NT Datasheet 2.6a NPN Low Vcesat (biss) Transistor

Manufacturer: NXP Semiconductors

Overview: DataSheet.in PBSS4032NT 30 V, 2.6 A NPN low VCEsat (BISS) transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.

Datasheet Details

Part number	PBSS4032NT
Manufacturer	NXP Semiconductors
File Size	208.68 KB
Description	2.6A NPN low VCEsat (BISS) transistor
Datasheet	PBSS4032NT_NXPSemiconductors.pdf

General Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS4032PT.

1.2

Key Features

Low collector-emitter saturation voltage VCEsat Optimized switching time High collector current capability IC and ICM High collector current gain (hFE) at high IC High energy efficiency due to less heat generation AEC-Q101 qualified Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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